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UTT25P10L-VB Datasheet
Datasheet specifications
| Datasheet's name | UTT25P10L-VB |
|---|---|
| File size | 69.112 KB |
| File type | |
| Number of pages | 7 |
Download Datasheet UTT25P10L-VB |
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Other documentations
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Technical specifications
- RoHS: true
- Type: P Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: VBsemi Elec UTT25P10L-VB
- Power Dissipation (Pd): -
- Total Gate Charge (Qg@Vgs): -
- Drain Source Voltage (Vdss): 100V
- Input Capacitance (Ciss@Vds): -
- Continuous Drain Current (Id): 18A
- Gate Threshold Voltage (Vgs(th)@Id): -
- Reverse Transfer Capacitance (Crss@Vds): -
- Drain Source On Resistance (RDS(on)@Vgs,Id): 167mΩ@10V,18A
- Package: TO-220
- Manufacturer: VBsemi Elec